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3SK231U1C Datasheet

  • 3SK231U1C

  • TRANSISTOR | MOSFET | N-CHANNEL | 18V V(BR)DSS | 25MA I(D) |...

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  • ETC

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DATA SHEET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
鈥?Low Noise Figure
鈥?High Power Gain
鈥?Enhancement Typ.
鈥?Suitable for use as RF amplifier in UHF TV tuner.
鈥?Automatically Mounting : Embossed Type Taping
(1.8)
0.85 0.95
NF = 2.0 dB TYP. (@ = 900 MHz)
G
ps
= 17.5 dB TYP. (@ = 900 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
0.4
鈭?.05
0.4
鈭?.05
0.16
5擄
+0.1
鈭?.06
2.8
鈭?.3
1.5
鈭?.1
2
+0.2
+0.1
+0.1
+0.2
鈥?Small Package : 4 Pins Mini Mold Package. (SC-61)
2.9鹵0.2
3
4
5擄
0 to 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25

C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*R
L

10 k

V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
V
0.6
鈭?.05

8 (

10)*

8 (

10)*
18
18
25
200
125
V
+0.2
鈭?.1
5擄
V
V
mA
mW
1.1
0.8

55 to +125

C

C
5擄
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
Document No. P10588EJ2V0DS00 (2nd edition)
(Previous No. TC-2283)
Date Published March 1997 N
Printed in Japan
漏
0.4
鈭?.05
+0.1
+0.1
V
1
(1.9)
1993

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