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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK230

RF AMP. FOR VHF/CATV TUNER

N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

路

The Characteristic of Cross-Modulation is good.

CM = 108 dB

m

(TYP.) @f = 470 MHz, G

R

=

-

30 dB

Low Noise Figure

High Power Gain

Enhancement Typ.

(1.8)

PACKAGE DIMENSIONS

(Unit: mm)

0.4

+0.1

鈥?.05

1.5

+0.2

鈥?.1

2

3

4

5擄

0.4

+0.1

鈥?.05

0.16

+0.1

鈥?.06

5擄

0 to 0.1

0.4

+0.1

鈥?.05

2.8

鈥?.3

+0.2

路

NF1 = 2.2 dB TYP. (@ = 470 MHz)

NF2 = 0.9 dB TYP. (@ = 55 MHz)

G

PS

= 19.5 dB TYP. (@ = 470 MHz)

2.9鹵0.2

0.95

路

路

路

路

路

Automatically Mounting: Embossed Type Taping

Small Package: 4 Pins Mini Mold Package. (SC-61)

0.85

0.6

+0.1

鈥?.05

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄

C)

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

R

L

魯

10 k

W

V

DSX

V

G1S

V

G2S

V

G1D

V

G2D

I

D

P

D

T

ch

T

stg

18

鹵8(鹵10)*

鹵8(鹵10)*

18

18

25

200

125

1

1

V

V

V

V

mA

mW

0.8

V

1.1

+0.2

鈥?.1

-

55 to +125

擄

C

擄

C

PIN CONNECTIONS

1. Source

2. Drain

3. Gate 2

4. Gate 1

PRECAUTION:

Avoid high static voltages or electric fields so that this device would not suffer from any damage due

to those voltages or fields.

Document No. P10587EJ3V0DS00 (3rd edition)

Date Published November 1996 N

Printed in Japan

1

5擄

5擄

漏

(1.9)

Suitable for use as RF amplifier in CATV tuner.

1993

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