DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK224
RF AMPLIFIER FOR UHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
鈥?Low Noise Figure:
鈥?High Power Gain:
鈥?Automatically Mounting:
鈥?Small Package:
NF = 1.8 dB TYP. (f = 900 MHz)
G
PS
= 17 dB TYP. (f = 900 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
0.4
鈥?.05
0.4
鈥?.05
+0.1
0.16
鈥?.06
+0.1
Embossed Type Taping
4 Pins Mini Mold
2.9鹵0.2
(1.8)
0.85 0.95
2
3
4
5擄
+0.1
鈥?Suitable for use as RF amplifier in UHF TV tuner.
2.8
鈥?.1
+0.2
1.5
鈥?.1
+0.2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
鈮?/div>
10 k鈩?/div>
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
鹵8
(鹵10)
*1
鹵8
(鹵10)
*1
18
18
25
200
125
鈥?5 to +125
V
V
V
V
mA
mW
擄C
擄C
0.6
鈥?.05
1
5擄
1.1
鈥?.1
0.8
+0.2
V
5擄
0 to 0.1
5擄
1.
2.
3.
4.
Source
Drain
Gate 2
Gate 1
Document No. P10576EJ2V0DS00 (2nd edition)
(Previous No. TD-2265)
Date Published August 1995 P
Printed in Japan
+0.1
0.4
鈥?.05
+0.1
(1.9)
漏
1989
1993
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