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3SK223 Datasheet

  • 3SK223

  • RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD...

  • 6頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK223
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
鈥?The Characteristic of Cross-Modulation is good.
CM = 101 dB
碌
TYP. @ f = 470 MHz, G
R
= 鈥?0 dB
鈥?Low Noise Figure:
鈥?High Power Gain:
鈥?Enhancement Type.
2.9鹵0.2
(1.8)
PACKAGE DIMENSIONS
(Unit: mm)
2.8
鈥?.3
+0.2
+0.2
+0.2
0.4
鈥?.3
NF2 = 0.9 dB TYP. (f = 55 MHz)
G
PS
= 20 dB TYP. (f = 470 MHz)
0.85 0.95
1.5
鈥?.3
2
3
0.4
鈥?.3
0.4
鈥?.3
0.16
鈥?.3
+0.2
+0.2
NF1 = 2.2 dB TYP. (f = 470 MHz)
鈥?Suitable for use as RF amplifier in CATV tuner.
鈥?Automatically Mounting:
鈥?Small Package:
Embossed Type Taping
4 Pins Mini Mold
1
+0.2
4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
鈮?/div>
10 k鈩?/div>
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
鹵8
18
(鹵10)
*1
18
18
25
200
125
鈥?5 to +125
鹵8
(鹵10)
*1
V
V
V
V
mA
mW
擄C
擄C
1.1
0.8
0.6
鈥?.3
5擄
5擄
V
+0.2
鈥?.3
5擄
0 to 0.1
5擄
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10575EJ2V0DS00 (2nd edition)
(Previous No. TD-2268)
Date Published August 1995 P
Printed in Japan
+0.2
(1.9)
漏
1989
1993

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