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3SK222 Datasheet

  • 3SK222

  • RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL...

  • 60.55KB

  • 6頁(yè)

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK222
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
鈥?The Characteristic of Cross-Modulation is good.
CM = 92 dB
碌
TYP. @ f = 200 MHz, G
R
= 鈥?0 dB
PACKAGE DIMENSIONS
(Unit: mm)
0.4
+0.1
鈥?.05
1.5
+0.2
鈥?.1
2.8
+0.2
鈥?.3
鈥?Low Noise Figure:
鈥?High Power Gain:
鈥?Enhancement Type.
NF1 = 1.2 dB TYP. (f = 200 MHz)
NF2 = 1.0 dB TYP. (f = 55 MHz)
G
PS
= 23 dB TYP. (f = 200 MHz)
(1.8)
0.85 0.95
2.9鹵0.2
2
鈥?Automatically Mounting:
鈥?Small Package:
Embossed Type Taping
4 Pins Mini Mold
1
5擄
5擄
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
鈮?/div>
10 k鈩?/div>
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
鹵8
18
(鹵10)
*1
18
18
25
200
125
鈥?5 to +125
鹵8
(鹵10)
*1
V
1.1
0.8
V
V
V
V
mA
mW
擄C
擄C
+0.2
鈥?.1
0.4
+0.1
鈥?.05
0.16
+0.1
鈥?.06
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
0.6
+0.1
鈥?.05
5擄
0 to 0.1
5擄
1.
2.
3.
4.
Source
Drain
Gate 2
Gate 1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10574EJ2V0DS00 (2nd edition)
(Previous No. TD-2267)
Date Published August 1995 P
Printed in Japan
4
(1.9)
鈥?Suitable for use as RF amplifier in FM tuner and VHF TV tuner.
3
0.4
+0.1
鈥?.05
漏
1989
1993

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