Ordering number:ENN2129B
N-Channel Silicon MOSFET (Dual Gate)
3SK180
High-Frequency General-Purpose Amplifier
Applications
Applications
路 FM tuners and VHF tuners.
Package Dimensions
unit:mm
2046A
[3SK180]
0.5
1.9
0.95 0.95
0.4
4
3
0 to 0.1
Features
路 High power gain and low noise figure.
路 High forward transfer admittance.
0.16
1
2
0.95 0.85
2.9
0.5
0.6
1.5
2.5
1 : Drain
2 : Source
3 : Gate 1
4 : Gate 2
SANYO : CP4
0.8
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate1-to-Source Voltage
Gate2-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
Conditions
1.1
Ratings
15
鹵7
鹵7
30
200
125
鈥?5 to +125
Unit
V
V
V
mA
mW
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate1-to-Source Breakdown Voltage
Gate2-to-Source Breakdown Voltage
Gate1-to-Source Cutoff Voltage
Gate2-to-Source Cutoff Voltage
Gate1-to-Source Leakage Current
Gate2-to-Source Leakage Current
Zero-Gate Voltage Drain Current
Symbol
VDS
V(BR)G1SS
V(BR)G2SS
Conditions
VG1S=鈥?V, VG2S=0V, IDS=100碌A(chǔ)
IG1=10碌A(chǔ), VDS=0, VG2S=0V
IG2=10碌A(chǔ), VDS=0, VG1S=0V
VDS=10V, VG2S=4V, ID=100碌A(chǔ)
VDS=10V, VG1S=0V, ID=100碌A(chǔ)
VG1S=鹵5V, VG2S=VDS=0V
VG2S=鹵5V, VG1S=VDS=0V
VDS=10V, VG1S=0, VG2S=4V
Ratings
min
15
鹵7
鹵7
鈥?
鈥?.5
鹵50
鹵50
2.5*
24*
typ
max
Unit
V
V
V
V
V
nA
nA
mA
VG1S(off)
VG2S(off)
IG1SS
IG2SS
IDSS
* : The 3SK180 is classified by I
DSS
as follows : (unit : mA)
Marking : DJ
I
DSS
rank : 4, 5, 6
2.5
4
6.0
5.0
5
12.0
10.0
6
24.0
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft鈥檚
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/90895MO (KOTO)6047KI/4246AT, TS 8-9917 No.2129鈥?/5
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