DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK134B
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
鈥?High Power Gain :
鈥?Low Noise Figure :
G
ps
= 23.0 dB TYP. (@ = 900 MHz)
NF = 2.4 dB TYP. (@ = 900 MHz)
PACKAGE DIMENSIONS
(Unit : mm)
2.8
+0.2
鈥?0.3
0.4
+0.1
鈥?0.05
鈥?Suitable for use as RF amplifier in UHF TV tuner.
鈥?Automatically Mounting :
鈥?Surface Mount Package :
Embossed Type Taping
4 Pins Mini Mold (EIAJ: SC-61)
2.9鹵0.2
0.95
1.5
+0.2
鈥?0.1
2
(1.8)
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
: R
L
鈮?/div>
10 k鈩?/div>
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
鹵8
(鹵10)
*1
鹵8
(鹵10)
*1
18
18
25
200
125
鈥?5 to +125
V
V
V
V
mA
mW
擄C
擄C
1.1
+0.2
鈥?0.1
0.85
Drain to Source Voltage
V
DSX
18
V
1
4
0.6
+0.1
鈥?0.05
5
o
5
o
0.8
0.4
+0.1
鈥?0.05
0.16
+0.1
鈥?0.05
5
o
0 to 0.1
5
o
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
Document No. P10566EJ2V0DS00 (2nd edition)
(Previous No. TD-2398)
Date Published August 1995 P
Printed in Japan
漏
(1.9)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
3
0.4
+0.1
鈥?0.05
1993
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