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3N170-71 Datasheet

  • 3N170-71

  • N-Channel Enhancement Mode MOSFET Switch

  • 2頁(yè)

  • CALOGIC   CALOGIC

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N-Channel Enhancement
Mode MOSFET Switch
CORPORATION
3N170 / 3N171
FEATURES
HANDLING PRECAUTIONS
MOS field-effect transistors have extremely high input
resistance and can be damaged by the accumulation of
excess static charge. To avoid possible damage to the device
while wiring, testing, or in actual operation, follow the
procedures outlined below.
1. To avoid the build-up of static charge, the leads of the
devices should remain shorted together with a metal ring
except when being tested or used.
2. Avoid unnecessary handling. Pick up devices by the case
instead of the leads.
TO-72
鈥?/div>
Low Switching Voltages
鈥?/div>
Fast Switching Times
Drain-Source Resistance
鈥?/div>
Low Reverse Transfer Capacitance
Low
鈥?/div>
PIN CONFIGURATION
3. Do not insert or remove devices from circuits with the
power on as transient voltages may cause permanent
damage to the devices.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
D
C,B
G
S
1003
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵35V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵35V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N170-71
X3N170-71
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C

3N170-71相關(guān)型號(hào)PDF文件下載

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  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINEAR
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINER
  • 英文版
    N-Channel Enhancement Mode MOSFET Switch
    CALOGIC
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINER [Lin...
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINEAR [Li...
  • 英文版
    N-Channel Enhancement Mode MOSFET Switch
    CALOGIC [C...
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINEAR
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINER
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINER [Lin...
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINEAR [Li...
  • 英文版
    Diode Protected P-Channel Enhancement Mode MOSFET General Pu...
    CALOGIC
  • 英文版
    Diode Protected P-Channel Enhancement Mode MOSFET General Pu...
    CALOGIC [C...
  • 英文版
    Diode Protected P-Channel Enhancement Mode MOSFET General Pu...
    CALOGIC
  • 英文版
    Diode Protected P-Channel Enhancement Mode MOSFET General Pu...
    CALOGIC [C...
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINEAR
  • 英文版
    N-CHANNEL MOSFET ENHANCEMENT MODE
    LINEAR [Li...
  • 英文版
    N-Channel Enhancement Mode MOSFET Switch
    CALOGIC
  • 英文版
    N-Channel Enhancement Mode MOSFET Switch
    CALOGIC [C...
  • 英文版
    Diode Protected P-Channel Enhancement Mode MOSFET General Pu...
    CALOGIC
  • 英文版
    Diode Protected P-Channel Enhancement Mode MOSFET General Pu...
    CALOGIC [C...

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