3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
Linear Integrated Systems
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25擄C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163
3N164
Transient G-S Voltage
(NOTE 1)
Drain Current
Storage Temperature
Power Dissipation
D
S
G
2
1
3
4
Case
D
S
-40V
-30V
鹵125V
50mA
-65擄C to +200擄C
375mW
G
Case
18 X 30 MILS
TO-72
Bottom View
ELECTRICAL CHARACTERISTICS @ 25
擄
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
3N163
3N164
MIN
MAX
MIN
MAX
Gate Forward Current
-10
-10
pA
I
GSSF
T
A
=+125擄C
BV
DSS
BV
SDS
V
GS(th)
V
GS(th)
V
GS
I
DSS
I
SDS
r
DS(on)
I
D(on)
g
fs
g
os
C
iss
C
rss
C
oss
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Threshold Voltage
Threshold Voltage
Gate Source Voltage
Zero Gate Voltage Drain Current
Source Drain Current
Drain-Source on Resistance
On Drain Current
Forward Transconductance
Output Admittance
Input Capacitance-Output Shorted
Reverse Transfer Capacitance
Output Capacitance Input Shorted
-5.0
2000
-40
-40
-2.0
-2.0
-3.0
-5.0
-5.0
-6.5
200
400
250
-30
4000
250
2.5
0.7
3.0
-3.0
1000
-25
-30
-30
-2.0
-2.0
-3.0
-5.0
-5.0
-6.5
400
800
300
-30
4000
250
2.5
0.7
3.0
-25
UNITS
CONDITIONS
V
DS
=0 (3N163)
V
DS
=0 (3N164)
V
GS
=0
V
GD
=0
V
BD
=0
I
D
=-10碌A(chǔ)
I
D
=-10碌A(chǔ)
I
D
=-0.5mA
V
GS
=0
V
GS
=V
DB
=0
I
D
=-100碌A(chǔ)
V
GS
=-10V
I
D
=-10mA
I
D
=-10mA
f=1kHz
f=1MHz
V
GS
=-40V
V
GS
=-30V
I
D
=-10碌A(chǔ)
V
I
S
=-10碌A(chǔ)
V
DS
=V
GS
V
DS
=-15V
V
DS
=-15V
pA
ohms
mA
碌s
pF
V
DS
=-15V
V
DS
=15V
V
GS
=-20V
V
DS
=-15V
V
DS
=-15V
V
DS
=-15V
(NOTE
2)
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 鈥?FAX: (510) 353-0261
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