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3LN03SS Datasheet

  • 3LN03SS

  • General-Purpose Switching Device Applications

  • 4頁

  • SANYO

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Ordering number : ENN8231
3LN03SS
N-Channel Silicon MOSFET
3LN03SS
Features
鈥?/div>
鈥?/div>
鈥?/div>
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General-Purpose Switching Device
Applications
Low ON-resistance.
High-speed switching.
2.5V drive.
High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage (*1)
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW鈮?0碌s, duty cycle鈮?%
Conditions
Ratings
30
10
0.35
1.4
0.15
150
--55 to +150
Unit
V
V
A
A
A
A
W
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics
at Ta=25擄C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
錚?/div>
yfs
錚?/div>
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=8V, VDS=0
VDS=10V, ID=100碌A(chǔ)
VDS=10V, ID=180mA
ID=180mA, VGS=4V
ID=90mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
min
30
1
1
0.4
0.36
0.6
0.7
0.8
1.6
30
7
3.5
0.9
1.15
2.4
1.3
typ
max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
S
鈩?/div>
鈩?/div>
鈩?/div>
pF
pF
pF
Marking : YG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22805PE TS IM TA-100963 No.8231-1/4

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