HMC384LP4
/
384LP4E
v02.0705
MMIC VCO w/ BUFFER
AMPLIFIER, 2.05 - 2.25 GHz
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
鈥?Wireless Infrastructure
鈥?Industrial Controls
鈥?Test Equipment
鈥?Military
Features
Pout: +3.5 dBm
Phase Noise: -112 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 35 mA
QFN Leadless SMT Package, 16 mm
2
9
VCOs & PLOs - SMT
Functional Diagram
General Description
The HMC384LP4 & HM384LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers. The
VCO鈥檚 phase noise performance is excellent over
temperature, shock, vibration and process due to the
oscillator鈥檚 monolithic structure. Power output is 3.5
dBm typical from a 3.0V supply voltage. The voltage
controlled oscillator is packaged in a low cost leadless
QFN 4 x 4 mm surface mount package.
Electrical Specifications,
T
A
= +25擄 C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
6
-7
-23
2.5
5
0.25
0
35
10
0.5
Min.
Typ.
2.05 - 2.25
3.5
-112
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
渭A
dB
dBc
dBc
MHz pp
MHz/V
MHz/擄C
9-8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1
2
3
4
5
6
