HMC375LP3
/
375LP3E
v01.0604
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC375LP3 / HMC375LP3E is ideal for
basestation receivers:
鈥?GSM, GPRS & EDGE
鈥?CDMA & W-CDMA
鈥?DECT
Features
Noise Figure: 0.9 dB
+34 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0 V @ 136 mA
50 Ohm Matched Output
Functional Diagram
General Description
The HMC375LP3 & HMC375LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 0.9 dB noise
figure, 17 dB gain and +33 dBm output IP3 from a
single supply of +5.0V @ 136mA. Input and output
return losses are 14 dB typical with the LNA requiring
minimal external components to optimize the RF input
match, RF ground and DC bias. The HMC375LP3
& HMC375LP3E share the same package with the
HMC356LP3 and HMC372LP3 high IP3 LNAs. A
low cost, leadless 3x3 mm (LP3) SMT QFN package
houses the low noise amplifier.
Electrical Specifications,
T
A
= +25擄 C, Vs = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for
1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
Supply Current (Idd)
16
16.5
Min.
Typ.
1.8 - 1.9
18.5
0.014
1.0
12
13
35
18.5
19.5
34
136
16
0.021
1.35
15.5
Max.
Min.
Typ.
1.9 - 2.0
17.5
0.014
0.95
13
16
34
18.5
19.5
33.5
136
15
0.021
1.2
15
Max.
Min.
Typ.
2.0 - 2.1
17
0.014
0.9
14
11
34
18
19.5
33
136
14.5
0.021
1.2
13
Max.
Min.
Typ.
2.1 - 2.2
15
0.014
0.9
15
8
34
17.5
19.5
136
0.021
1.3
Max.
Units
GHz
dB
dB/擄C
dB
dB
dB
dB
dBm
dBm
dBm
mA
5 - 118
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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