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HMC358MS8G

/

358MS8GE

v04.0607

MMIC VCO w/ BUFFER

AMPLIFIER, 5.8 - 6.8 GHz

Typical Applications

Low noise MMIC VCO w/Buffer Amplifier

for C-Band applications such as:

鈥?UNII & Pt. to Pt. Radios

鈥?802.11a & HiperLAN WLAN

鈥?VSAT Radios

Features

Pout: +11 dBm

Phase Noise: -110 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: 3V @ 100 mA

15mm

2

MSOP8G SMT Package

Functional Diagram

General Description

The HMC358MS8G & HMC358MS8GE are GaAs

InGaP Heterojunction Bipolar Transistor (HBT) MMIC

VCOs. The HMC358MS8G & HMC358MS8GE inte-

grate resonators, negative resistance devices, varac-

tor diodes, and buffer amplifiers. The VCO鈥檚 phase

noise performance is excellent over temperature,

shock, and process due to the oscillator鈥檚 monolithic

structure. Power output is 11 dBm typical from a 3.0V

supply voltage. The voltage controlled oscillator is

packaged in a low cost, surface mount 8 lead MSOP

package with an exposed base for improved RF and

thermal performance.

10

VCO

S

& PLOs - SMT

Electrical Specifications,

T

A

= +25擄 C, Vcc = +3V

Parameter

Frequency Range

Power Output

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

Tune Voltage (Vtune)

Supply Current (Icc)

Tune Port Leakage Current (Vtune= 10V)

Output Return Loss

Harmonics

2nd

3rd

Pulling (into a 2.0:1 VSWR)

Pushing @ Vtune= +3V

Frequency Drift Rate

9

-10

-20

10

150

0.8

0

100

10

8

Min.

Typ.

5.8 - 6.8

11

-110

10

Max.

Units

GHz

dBm

dBc/Hz

V

mA

渭A

dB

dB

dB

MHz pp

MHz/V

MHz/擄C

10 - 2

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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358MS8GE相關(guān)型號(hào)PDF文件下載

• 型號(hào)
  版本
  描述
  廠商
  下載
• 358MS8GE
  英文版
  MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz
  HITTITE
  358MS8GE
• 358MS8GE
  英文版
  MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz
  HITTITE [Hittit...
  358MS8GE

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