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HMC351S8

/

351S8E

v03.0705

GaAs MMIC HIGH IP3 DOUBLE-

BALANCED MIXER, 0.7 - 1.2 GHz

Typical Applications

The HMC351S8 / HMC351S8E is ideal for:

鈥?Cellular Basestations

Features

Conversion Loss: 9.0 dB

LO/IF Isolation: 35 dB

LO/RF Isolation: 42 dB

Input IP3: +25 dBm

Input IP2: +48 dBm

7

MIXERS - SMT

鈥?Cable Modems

鈥?Fixed Wireless Access Systems

Functional Diagram

General Description

The HMC351S8 & HMC351S8E are double balanced

mixers in 8 lead plastic surface mount packages.

The passive GaAs schottky diode mixer implements

planar on chip baluns and requires no external com-

ponents. The mixer can be used as an upconverter,

down converter, or modulator. The mixer provides 9

dB conversion loss and +25 dBm IIP3 with LO drive

levels of +19 dBm. The design was optimized for low

cost high volume applications where high converter

linearity is required. The high LO suppression of 42

dB yields excellent carrier suppression for modulator

applications.

Electrical Specifications,

T

A

= +25擄 C

LO = +19 dBm, IF = 100 MHz

Parameter

Min.

Frequency Range, RF & LO

Frequency Range, IF

Conversion Loss

Noise Figure (SSB)

LO to RF Isolation

LO to IF Isolation

RF to IF Isolation

IP3 (Input)

IP2 (Input)

1 dB Compression (Input)

36

31

9

22

40

12

Typ.

0.7 - 1.2

DC - 0.3

9

9

42

35

13

25

48

16

11.5

11.5

Max.

GHz

GHz

dB

dB

dB

dB

dB

dBm

dBm

dBm

Units

*Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.

7 - 226

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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