NONLINEAR MODEL
SCHEMATIC
NE325S01
CGD_PKG
0.001pF
Ldx
DRAIN
Lgx
GATE
Rgx 0.69nH
6 ohms
CGS_PKG
0.07pF
Lsx
0.07nH
Rsx
0.06 ohms
CDS_PKG
0.05PF
Q1
0.6nH
Rdx
6 ohms
SOURCE
FET NONLINEAR MODEL PARAMETERS
(1)
Parameters
VTO
VTOSC
ALPHA
BETA
GAMMA
GAMMADC
Q
DELTA
VBI
IS
N
RIS
RID
TAU
CDS
RDB
CBS
CGSO
CGDO
DELTA1
DELTA2
FC
VBR
Q1
-0.8
0
8
0.103
0.092
0.08
2
1
0.715
3e-13
1.22
0
0
4e-12
0.13e-12
5000
1e-9
0.3e-12
0.02e-12
0.3
0.1
0.5
Infinity
Parameters
RG
RD
RS
RGMET
KF
AF
TNOM
XTI
EG
VTOTC
BETATCE
FFE
Q1
3
2
2
0
0
1
27
3
1.43
0
0
1
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
MODEL RANGE
Frequency: 0.1 to 18 GHz
Bias:
V
DS
= 1 V to 3 V, I
D
= 5 mA to 30 mA
I
DSS
= 59.9 ma @ V
GS
= 0, V
DS
= 2 V
Date:
2/98
(1) Series IV Libra TOM Model
EXCLUSIVE NORTH AMERICAN AGENT FOR
California Eastern Laboratories
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) 鈥?Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -10/98
CALIFORNIA EASTERN LABORATORIES
鈥?Headquarters 鈥?4590 Patrick Henry Drive 鈥?Santa Clara, CA 95054-1817 鈥?(408) 988-3500 鈥?Telex 34-6393 鈥?FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE
1
