AlGaAs/GaAs HIGH POWER T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-324A4 is a high power infrared eimtting
diode in GaAs technology with AlGaAs window
coating molded in water clear plastic package.
蠁
3.55鹵0.25
(.140鹵.010)
蠁
3.10鹵0.20
(.122鹵.008)
MIE-324A4
Unit : mm (inches )
Package Dimensions
4.28鹵0.20
(.169鹵.008)
5.28鹵0.30
(.208鹵.012)
SEE NOTE 2
3.85
(.152)
Features
l
l
l
l
l
23.40MIN.
(.920)
CATHODE
High radiant power and high radiant intensity
Suitable ror DC and high pulse current operation
Standard T-1 (
蠁
3mm) package, radiation angle: 40擄
Peak wavelength
位p
= 940 nm
Good spectral matching to si-photodetector
A
0.50 TYP.
(.020)
1.00MIN.
(.039)
2.54NOM.
(.100)
SEE NOTE 3
C
Notes :
1. Tolerance is 鹵 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10碌s pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
1
2
