GaAlAs T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-304L3 is an infrared emitting diode in
GaAlAs on GaAlAs technology molded in water clear
plastic package.
蠄3.00
(.118)
MIE-304L3
Package Dimensions
Unit : mm (inches )
5.25
(.207)
1.00
(.040)
4.00
(.157)
SEE
NOTE 2
0.80 鹵0.50
(.031鹵.020)
FLAT DENOTES CATHODE
Features
l
l
l
l
l
23.40MIN.
(.920)
High power and high radiant intensity
Suitable for DC and high pulse current operation
Standard T-1 (
蠁
3mm ) package
Peak wavelength
位p
= 880 nm
Good spectral matching to si-photodetector
A
2.54
(.100)
SEE NOTE 3
0.50 TYP.
(.020)
1.00MIN.
(.040)
C
Notes :
1. Tolerance is 鹵0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.8 mm (.031") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10碌s pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
1
2
