AlGaAs/GaAs
HIGH POWER
T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-304A4 is a high power infrared eimtting
diode in GaAs technology with AlGaAs window
coating molded in water clear plastic package.
3.00
(.118)
MIE-304A4
Unit: mm (inches)
Package Dimensions
1.00
(.039)
5.25
(.207)
4.00
(.158)
SEE NOTE 2
0.80鹵0.50
(.032鹵.020)
FLAT DENOTES CATHODE
Features
l
l
l
l
l
23.40MIN.
(.921)
High radiant power and high radiant intensity
Suitable for DC and high pulse current operation
Standard T-1 (
蠁
3mm) package, radiation angle: 25擄
Peak wavelength
位p
= 940 nm
Good spectral matching to Si-Photodetector
0.50 TYP.
(.020)
1.00 MIN.
(.040)
2.54 NOM.
(.100)
SEE NOTE 3
A
C
Notes :
1. Tolerance is 鹵 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 0.8 mm (.031") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current
Continuous Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
1
2
