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2SK982_07 Datasheet

  • 2SK982_07

  • Silicon N Channel MOS Type High Speed Switching Applications

  • 520.03KB

  • 5頁

  • TOSHIBA

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上傳產(chǎn)品規(guī)格書

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2SK982
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK982
High Speed Switching Applications
Analog Switch Applications
Interface Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Excellent switching times: t
on
= 14 ns (typ.)
High forward transfer admittance: |Y
fs
| = 100 mS (min)
@I
D
= 50 mA
Low on resistance: R
DS (ON)
= 0.6
鈩?/div>
(typ.) @ I
D
= 50 mA
Enhancement-mode
Complementary to 2SJ148
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
(Ta
=
25擄C)
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
T
ch
T
stg
Rating
60
鹵20
200
800
400
150
鈭?5~150
Unit
V
V
mA
JEDEC
JEITA
TO-92
SC-43
2-5F1H
mW
擄C
擄C
TOSHIBA
Weight: 0.21 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01

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