鈥?/div>
High breakdown voltage: V
GDS
=
鈭?0
V
High input impedance: I
GSS
=
鈭?.0
nA (max) (V
GS
=
鈭?0
V)
Low noise: NF = 0.5dB (typ.) (R
G
= 100 k鈩? f = 120 Hz)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
鈭?0
10
100
125
鈭?5~125
Unit
V
mA
mW
擄C
擄C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-70
2-2E1B
Weight: 0.006 g (typ.)
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note)
V
GS (OFF)
鈳猋
fs
鈳?/div>
C
iss
C
rss
NF
Test Condition
V
GS
= 鈭?0
V, V
DS
=
0
V
DS
=
0, I
G
= 鈭?00 渭A
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
渭A
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
GD
= 鈭?0
V, I
D
=
0, f
=
1 MHz
V
DS
=
15 V, V
GS
=
0
R
G
=
100 k惟, f
=
120 Hz
Min
鈳?/div>
鈭?0
0.3
鈭?.4
1.2
鈳?/div>
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
8.2
2.6
0.5
Max
鈭?.0
鈳?/div>
6.5
鈭?.0
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
Unit
nA
V
mA
V
mS
pF
pF
dB
Note: I
DSS
classification
R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
1
2007-11-01
2SK879_07相關(guān)型號(hào)PDF文件下載
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