鈥?/div>
High |Y
fs
|: |Y
fs
| = 25 mS (typ.)
Low C
iss
: C
iss
= 7.5 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
鈭?0
10
150
125
鈭?5~125
Unit
V
mA
mW
擄C
擄C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1B
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note)
V
GS (OFF)
鈳猋
fs
鈳?/div>
C
iss
C
rss
Test Condition
V
GS
= 鈭?5
V, V
DS
=
0 V
V
DS
=
0 V, I
G
= 鈭?00 渭A
V
DS
=
5 V, V
GS
=
0 V
V
DS
=
5 V, I
D
=
1
渭A
V
DS
=
5 V, V
GS
=
0 V, f
=
1 kHz
V
DS
=
5 V, V
GS
=
0 V, f
=
1 MHz
V
DS
=
5 V, I
D
=
0 mA, f
=
1 MHz
Min
鈳?/div>
鈭?0
6
鈳?/div>
15
鈳?/div>
鈳?/div>
Typ.
鈳?/div>
鈳?/div>
鈳?/div>
鈳?/div>
25
7.5
2
Max
鈭?.0
鈳?/div>
32
鈭?.5
鈳?/div>
10
3
Unit
nA
V
mA
V
mS
pF
pF
Note: I
DSS
classification
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
(G)
(
(L)
(V)
) ...... I
DSS
rank marking
1
2007-11-01
2SK711_07相關(guān)型號PDF文件下載
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