Silicon Junction FETs (Small Signal)
2SK663
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
2.1鹵0.1
0.425
1.25鹵0.1
0.425
unit: mm
q
Low noise-figure (NF)
q
High gate to drain voltage V
GDO
q
S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.2
0.9鹵0.1
0 to 0.1
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
V
GSO
I
D
I
G
P
D
T
j
T
stg
Ratings
55
鈭?5
鈭?5
30
10
150
125
鈭?5
to +125
Unit
V
V
V
mA
mA
mW
擄C
擄C
0.7鹵0.1
s
Absolute Maximum Ratings
(Ta = 25擄C)
0.2鹵0.1
1: Source
2: Drain
3: Gate
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol (Example): 2B
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
g
m
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
鈭?0V,
V
DS
= 0
I
G
= 100碌A(chǔ), V
DS
= 0
V
DS
= 10V, I
D
= 10碌A(chǔ)
V
DS
= 10V, I
D
= 5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
g
= 100k鈩?/div>
f = 100Hz
2.5
7.5
6.5
1.9
2.5
55
80
鈭?
min
1
typ
max
12
鈭?0
Unit
mA
nA
V
V
mS
pF
pF
dB
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
Noise figure
NF
*
I
DSS
rank classification
Runk
I
DSS
(mA)
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
Marking Symbol
0.15
鈥?.05
+0.1
0.3
鈥?
+0.1
s
Features
1
1
2
