Silicon Junction FETs (Small Signal)
2SK0065
(2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
4.0
鹵0.2
2.0
鹵0.2
(0.8)
3.0
鹵0.2
unit: mm
I
Features
G
Diode is connected between gate and source
G
Low noise voltage
I
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
GDO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Ratings
12
鈭?2
2
2
2
20
鈭?0
to +70
鈭?0
to +150
Unit
V
V
mA
mA
mA
mW
擄C
擄C
1
2
3
0.45
+0.20
鈥?.10
(2.5) (2.5)
0.45
+0.20
鈥?.10
0.7
鹵0.1
15.6
鹵0.5
(0.8)
0.75 max.
7.6
1: Drain
2: Gate
3: Source
NS-B1 Package
I
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Mutual conductance
Symbol
I
DSS*
g
m
NV
Conditions
V
DS
= 4.5V, V
GS
= 0, R
S
= 2.2k鈩?鹵 1%
V
DS
= 4.5V, V
GS
= 0
R
S
= 2.2k鈩?鹵 1%, f = 1kHz
V
DS
= 4.5V, R
S
= 2.2k鈩?鹵 1%
C
G
= 10pF, A-curve
V
DS
= 4.5V, R
S
= 2.2k鈩?鹵 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 12V, R
S
= 2.2k鈩?鹵 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
V
DS
= 1V, R
S
= 2.2k鈩?鹵 1%
C
G
= 10pF, e
G
= 100mV, f = 70Hz
鈭?0
鈭?.5
鈭?1
min
0.04
300
500
typ
max
0.8
Unit
mA
碌S
4
碌V
dB
Noise figure
G
V1*
Voltage gain
G
V2*
G
V3*
*
dB
dB
I
DSS
rank classification and G
V
value
Runk
I
DSS
(mA)
G
V1
(dB)
G
V2
(dB)
鈭唡
G
V1
鈭?/div>
G
V2
| (dB)
P
0.04 to 0.2
>
鈭?3
>
鈭?2
<3
Q
0.15 to 0.8
>
鈭?2
>
鈭?1
<3
Note) The part number in the parenthesis shows conventional part number.
241
1
2
3
