Silicon MOS FETs (Small Signal)
2SK0657
(2SK657)
Silicon N-Channel MOS FET
Unit: mm
For switching
6.9
鹵0.1
(0.4)
2.5
鹵0.1
(1.0)
(1.0)
3.5
鹵0.1
2.0
鹵0.2
2.4
鹵0.2
(1.5)
(1.5)
I
Features
1.0
鹵0.1
(0.85)
1.25
鹵0.05
0.45
鹵0.05
0.55
鹵0.1
I
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
鹵100
鹵200
400
150
鈭?5
to +150
Unit
V
V
mA
mA
mW
擄C
擄C
G
1
(2.5)
2
(2.5)
3
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
Internal Connection
D
S
I
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100碌A, V
GS
= 0
I
D
= 100碌A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200鈩?/div>
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200鈩?/div>
10
20
min
typ
max
10
50
3.5
50
15
6
1.2
Unit
碌A
碌A
V
V
鈩?/div>
mS
pF
pF
pF
ns
ns
50
1.5
20
Forward transfer admittance
| Y
fs
|
Input capacitance (Common Source) C
iss
Output capacitance (Common Source) C
oss
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
t
on*
Turn-off time
t
off*
*
t
on
, t
off
measurement circuit
V
out
200鈩?/div>
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
90%
50鈩?/div>
100碌F
V
GS
= 5V
Note) The part number in the parenthesis shows conventional part number.
4.1
鹵0.2
G
High-speed switching
G
M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R 0.9
R 0.7
4.5
鹵0.1
1
2SK657相關型號PDF文件下載
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