Silicon MOS FETs (Small Signal)
2SK0656
(2SK656)
Silicon N-Channel MOS FET
For switching
4.0
鹵0.2
2.0
鹵0.2
(0.8)
3.0
鹵0.2
unit: mm
I
Features
I
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
200
150
鈭?5
to +150
Unit
V
V
mA
mA
mW
擄C
擄C
0.45
+0.20
鈥?.10
(2.5) (2.5)
0.45
+0.20
鈥?.10
0.7
鹵0.1
1
15.6
鹵0.5
G
High-speed switching
G
Small drive current owing to high input inpedance
G
High electrostatic breakdown voltage
2
3
(0.8)
0.75 max.
7.6
1: Source
2: Drain
3: Gate
NS-B1 Package
Internal Connection
D
R
1
G
R
2
S
I
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
OH
V
OL
R
1
+ R
2*1
C
oss
t
on*2
t
off*2
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200鈩?/div>
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200鈩?/div>
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100碌A(chǔ), V
GS
= 0
I
D
= 100碌A(chǔ), V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DD
= 5V, V
GS
= 1V, R
L
= 200鈩?/div>
V
DD
= 5V, V
GS
= 5V, R
L
= 200鈩?/div>
100
9
4.5
1.1
1
1
20
4.5
1
200
35
40
50
1.5
3.5
50
min
typ
max
10
80
Unit
碌A(chǔ)
碌A(chǔ)
V
V
鈩?/div>
mS
V
V
k鈩?/div>
pF
pF
pF
碌s
碌s
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Turn-off time
*1
*2
Resistance ratio R
1
/R
2
= 1/50
Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
285
2SK656相關(guān)型號PDF文件下載
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