Silicon MOS FETs (Small Signal)
2SK0655
(2SK655)
Silicon N-Channel MOS FET
unit: mm
For switching
I
Features
0.75 max.
4.0
鹵0.2
(0.8)
3.0
鹵0.2
2.0
鹵0.2
I
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
200
150
鈭?5
to +150
Unit
V
V
mA
mA
mW
擄C
擄C
0.45
+0.20
鈥?.10
(2.5) (2.5)
0.45
+0.20
鈥?.10
0.7
鹵0.1
15.6
鹵0.5
G
High-speed switching
G
Allowing to supply with the radial taping
(0.8)
7.6
2
3
1
1: Source
2: Drain
3: Gate
NS-B1 Package
Internal Connection
D
G
S
I
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Symbol
I
DSS
I
GSS
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100碌A(chǔ), V
GS
= 0
I
D
= 100碌A(chǔ), V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200鈩?/div>
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200鈩?/div>
min
typ
max
10
50
50
1.5
20
35
10
4
0.5
10
20
3.5
50
15
5
1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
鈩?/div>
mS
pF
pF
pF
ns
ns
V
DSS
V
th
R
DS(on)
| Y
fs
|
Forward transfer admittance
Input capacitance (Common Source) C
iss
Output capacitance (Common Source) C
oss
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
t
on*
Turn-off time
*
t
off
*
t
on
, t
off
measurement circuit
V
out
200鈩?/div>
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
90%
50鈩?/div>
100碌F
V
GS
= 5V
Note) The part number in the parenthesis shows conventional part number.
283
2SK655相關(guān)型號(hào)PDF文件下載
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