Silicon MOS FETs (Small Signal)
2SK0615
(2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I
Features
2.0
鹵0.2
G
Low ON-resistance
G
High-speed switching
G
Allowing to be driven directly by CMOS and TTL
G
M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9
鹵0.1
(0.4)
2.5
鹵0.1
(1.0)
(1.0)
3.5
鹵0.1
2.4
鹵0.2
(1.5)
(1.5)
R 0.9
R 0.7
I
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
*
Symbol
V
DS
V
GSO
I
D
I
DP
P
D *
T
ch
T
stg
Ratings
80
20
鹵0.5
鹵1
1
150
鈭?5
to +150
Unit
V
V
A
A
W
擄C
擄C
1
1.0
鹵0.1
(0.85)
1.25
鹵0.05
0.45
鹵0.05
0.55
鹵0.1
2
(2.5)
3
(2.5)
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
PC board: Copper foil of the drain portion should have a area of 1cm
2
or
more and the board thickness should be 1.7mm.
I
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
oss
t
on*1, 2
t
off*1, 2
*1
Conditions
V
DS
= 60V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
DS
= 100碌A(chǔ), V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.2A, V
DS
= 15V, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
typ
max
10
0.1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
鈩?/div>
mS
pF
pF
pF
ns
ns
80
1.5
2
300
45
30
8
15
20
3.5
4
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Turn-off time
*1
*2
Pulse measurement
t
on
, t
off
measurement circuit
V
out
V
in
= 10V
68鈩?/div>
V
DD
= 30V
V
out
V
in
10%
V
in
10%
90%
90% V
t = 1碌
S
f = 1MH
Z
out
50鈩?/div>
t
on
t
off
Note) The part number in the parenthesis shows conventional part number.
4.1
鹵0.2
4.5
鹵0.1
1
1
2
3
4
