Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s
Features
q
Low ON-resistance R
DS(on)
q
High-speed switching
q
Allowing to be driven directly by CMOS and TTL
q
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
2.6鹵0.1
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
0.4max.
45藲
1.0
鈥?.2
+0.1
0.4鹵0.08
4.0
鈥?.20
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
*
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
0.4鹵0.04
Symbol
V
DS
V
GSO
I
D
I
DP
P
D*
T
ch
T
stg
Ratings
80
20
鹵0.5
鹵1
1
150
鈭?5
to +150
Unit
3
2
1
V
V
A
A
W
擄C
擄C
1: Gate
2: Drain
3: Source
EIAJ: SC-62
Mini-Power Type Package (3-pin)
marking
Marking Symbol: O
PC board: Copper foil of the drain portion should have a area of 1cm
2
or
more and the board thickness should be 1.7mm.
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)*1
| Y
fs
|
C
oss
t
on
*2
*2
Conditions
V
DS
= 60V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
DS
= 100碌A(chǔ), V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.2A, V
DS
= 15V, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
typ
max
10
0.1
Unit
碌A(chǔ)
碌A(chǔ)
V
80
1.5
2
300
45
30
8
15
20
3.5
4
V
鈩?/div>
mS
pF
pF
pF
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Turn-off time
*1
*2
t
off
Pulse measurement
t
on
, t
off
measurement circuit
V
out
V
in
= 10V
68鈩?/div>
V
DD
= 30V
V
out
V
in
10%
V
in
10%
90%
90% V
t = 1碌
S
f = 1MH
Z
out
50鈩?/div>
t
on
t
off
2.5鹵0.1
+0.25
1
1
2
