3.3max.
15.9max.
1.8max.
4.8max.
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
鈥?/div>
SC-65
2鈭?6C1B
Weight: 4.6 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
0.833
50
Unit
擄C/W
擄C/W
1
Note 1: Ensure that the channel temperature does not exceed 150擄C
during use of the device.
Note 2: V
DD
=
90 V, T
ch
=
25擄C, L
=
18.4 mH, R
G
=
25
惟,
I
AR
=
7 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2007-07-24
20.5鹵0.5
Absolute Maximum Ratings
(Ta
=
25擄C)
2.0鹵0.3
1
2
3
