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2SK4108 Datasheet

  • 2SK4108

  • Silicon N-Channel MOS Type Switching Regulator Applications

  • 287.41KB

  • 6頁(yè)

  • TOSHIBA

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2SK4108
TOSHIBA Field Effect Transistor
Silicon N-Channel MOS Type (蟺-MOS VI)
2SK4108
Switching Regulator Applications
Low drain鈭抯ource ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0. 21惟 (typ.)
: |Y
fs
| = 14 S (typ.)
Unit: mm
: I
DSS
= 100
渭A
(max) (V
DS
= 500 V)
: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristic
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
鹵30
20
80
150
960
20
15
150
鈭?5~150
Unit
V
V
V
A
A
W
mJ
A
mJ
擄C
擄C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Pulse (Note 1)
Drain power dissipation (Tc = 25擄C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-16C1B
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
Weight: 4.6 g (typ.)
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抍)
R
th (ch鈭抋)
Max
0.833
50
Unit
擄C / W
擄C / W
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
= 90 V, T
ch
= 25擄C (initial), L = 4.08 mH, R
G
= 25
惟,
I
AR
= 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2007-06-29

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