2SK4059TV Datasheet

IC型號(hào)：
2SK4059TV
PDF描述：
Silicon N Channel Junction Type For ECM
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147.55KB
PDF頁(yè)數(shù)：
5頁(yè)
芯片廠家：
TOSHIBA

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2SK4059TV

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK4059TV

For ECM

鈥?/div>

Application for Ultra-compact ECM

0.2鹵0.05

1.2鹵0.05

0.3鹵0.05

0.8鹵0.05

Unit: mm

1.2鹵0.05

0.8鹵0.1

Absolute Maximum Ratings

(Ta=25擄C)

Characteristic

Gate-Drain voltage

Gate Current

Drain power dissipation (Ta

25擄C)

Junction Temperature

Storage temperature range

Symbol

GDO

stg

Rating

-20

100

125

鈭?5~125

Unit

擄C

0.4

0.28鹵0.02

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (鈥淗andling

Precautions鈥?鈥淒erating Concept and Methods鈥? and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

VESM2

JEDEC

JEITA

TOSHIBA

1.Drain

2.Source

3.Gate

2-1H1A

Weight: 0.8mg (typ.)

IDSS CLASSIFICATION

A-Rank

140~240碌A(chǔ)

B-Rank

210~350碌A(chǔ)

BK-Rank 210~400碌A(chǔ)

C-Rank

320~500碌A(chǔ)

Marking

Type Name

Top Gate

Lot Code

IDSS Classification Symbol

A :A-Rank

B :B-Rank BK-Rank

C :C-Rank

Equivalent Circuit

鈻?/div>

Precaution

There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don鈥檛 use

it as a terminal.

2007-11-01

0.09鹵0.03

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