2SK4043LS Datasheet

IC型號：
2SK4043LS
PDF描述：
N-Channel Silicon MOSFET General-Purpose Switching Device
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40.56KB
PDF頁數(shù)：
4頁
芯片廠家：
SANYO

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Ordering number : EN8642

2SK4043LS

N-Channel Silicon MOSFET

2SK4043LS

Features

鈥?/div>

General-Purpose Switching Device

Applications

Low ON-resistance.

2.5V drive.

Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratings

at Ta=25擄C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Symbol

VDSS

VGSS

IDP

Tch

Tstg

EAS

IAV

PW鈮?0碌s, duty cycle鈮?%

Tc=25擄C

Conditions

Ratings

鹵10

2.0

150

--55 to +150

147

Unit

擄C

Note :

VDD=10V, L=500碌H, IAV=20A

L鈮?00碌H, Single pulse

Electrical Characteristics

at Ta=25擄C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

錚?/div>

yfs

錚?/div>

RDS(on)1

RDS(on)2

Conditions

ID=1mA, VGS=0V

VDS=30V, VGS=0V

VGS=

鹵8V,

VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=10A

ID=10A, VGS=4V

ID=10A, VGS=2.5V

Ratings

min

鹵10

0.4

1.3

typ

max

Unit

碌

m鈩?/div>

Marking : K4043

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1805QA MS IM TB-00001889 No.8642-1/4

制造商
ON Semiconductor
產(chǎn)品種類
MOSFET
晶體管極性
N-Channel
汲極/源極擊穿電壓
30 V
閘/源擊穿電壓
+/- 10 V
漏極連續(xù)電流
20 A
電阻汲極/源極 RDS（導(dǎo)通）
21 mOhms
配置
Single
最大工作溫度
+ 150 C
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-220LS-3
封裝
Bulk
最小工作溫度
- 55 C
功率耗散
20 W

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