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2SK4042 Datasheet

  • 2SK4042

  • Switching Regulator Applications

  • 6頁

  • TOSHIBA

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2SK4042
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSVI)
2SK4042
Switching Regulator Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 0.7惟 (typ.)
High forward transfer admittance: |Y
fs
| = 6.5S (typ.)
Low leakage current: I
DSS
= 100
渭A
(V
DS
= 500 V)
Enhancement mode: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k惟)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
500
500
鹵30
8
32
40
312
8
4
150
-55~150
A
W
mJ
A
mJ
擄C
擄C
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
1: Gate
2: Drain
3: Source
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?鈥欌€橠erating Concept and
Methods鈥欌€? and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
3.125
62.5
Unit
擄C/W
擄C/W
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C(initial), L
=
8.3 mH, I
AR
=
8 A, R
G
=
25
惟
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
3
1
2007-10-01

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