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2SK4037 Datasheet

  • 2SK4037

  • 470 MHz Band Amplifier Applications

  • 5頁

  • TOSHIBA

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2SK4037
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK4037
470 MHz Band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for
high frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment
鈥?/div>
鈥?/div>
鈥?/div>
Output power: P
o
= 36.5dBmW (typ)
Gain: G
p
= 11.5dB (typ)
Drain Efficiency:
畏D
= 60.0% (typ)
Unit: mm
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Symbol
V
DSS
V
GSS
(Note 1)
I
D
P
D
(Note 2)
T
ch
T
stg
Rating
12
3
3
20
150
鈭?5~150
Unit
V
V
A
W
擄C
擄C
JEDEC
鈥?/div>
Note:
JEITA
鈥?/div>
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-5N1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.08 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Operating Ranges: 0~3V
Note 2: Tc = 25擄C (When mounted on a 0.8 mm glass epoxy PCB)
Marking
Type Name
UE
Dot
F
**
Lot No.
Caution:
This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-11-01

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