2SK4022 Datasheet

IC型號(hào)：
2SK4022
PDF描述：
Switching Regulator, DC/DC Converter and Motor Drive Applica...
文件大小：
208.84KB
PDF頁數(shù)：
6頁
芯片廠家：
TOSHIBA

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2SK4022

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (蟺鈭扢OS V)

2SK4022

Switching Regulator, DC/DC Converter and

Motor Drive Applications

錛栵紟錛暵憋紣錛庯紥

錛曪紟錛捖憋紣錛庯紥

錛戯紟錛暵憋紣錛庯紥

Unit: mm

錛愶紟錛?MAX錛?/div>

鈥?/div>

4 V gate drive

Low drain-source ON-resistance: R

DS (ON)

= 1.2

惟

(typ.)

High forward transfer admittance: |Y

| = 2.2 S (typ.)

Low leakage current: I

DSS

= 100

渭A

= 250 V)

Enhancement mode: V

= 1.5~3.5 V (V

= 10 V, I

= 1 mA)

錛戯紟錛?/div>

錛曪紟錛暵憋紣錛庯紥

錛愶紟錛?/div>

錛旓紟錛懧憋紣錛庯紥

錛曪紟錛?/div>

錛戯紟錛懧憋紣錛庯紥

錛愶紟錛?MAX

錛掞紟錛?/div>

錛掞紟錛撀憋紣錛庯紥

錛愶紟錛柭憋紣錛庯紤錛?/div>

Absolute Maximum Ratings

(Ta

25擄C)

Characteristic

Drain-source voltage

Drain-gate voltage (R

20 k惟)

Gate-source voltage

Drain current

(Note 1)

Symbol

DSS

DGR

GSS

stg

Rating

250

鹵20

36.2

150

鈭?5~150

擄C

Unit

錛愶紟錛?MAX錛?/div>

錛戯紟1 MAX錛?/div>

錛?/div>

JEDEC

JEITA

TOSHIBA

鈳?/div>

2-7J2B

Pulse (t

1 ms)

(Note 1)

Drain power dissipation (Tc

25擄C)

Single-pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Weight: 0.36 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Symbol

th (ch-c)

th (ch-a)

Max

6.25

125

Unit

擄C/W

Note 1: Ensure that the channel temperature does not exceed 150擄C.

Note 2: V

50 V, T

25擄C, L

6.7 mH, I

3 A, R

25惟

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-21

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