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2SK4015 Datasheet

  • 2SK4015

  • Silicon N-Channel MOS Type Switching Regulator Applications

  • 215.68KB

  • 6頁

  • TOSHIBA

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2SK4015
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (蟺鈭扢OS VI)
2SK4015
Switching Regulator Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drain-source ON-resistance: R
DS (ON)
= 0.60
惟
(typ.)
High forward transfer admittance: |Y
fs
| = 7.4 S (typ.)
Low leakage current: I
DSS
= 100
渭A
(V
DS
= 600 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k惟)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
鹵30
10
40
45
363
10
4.5
150
-55~150
A
W
mJ
A
mJ
擄C
擄C
1: Gate
2: Drain
3: Source
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25擄C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.78
62.5
Unit
擄C/W
擄C/W
1
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
=
90 V, T
ch
=
25擄C (initial), L
=
6.36 mH, I
AR
=
10 A, R
G
=
25
惟
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1
2007-06-29

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