鈳?/div>
2-7J2B
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抋)
Max
125
Unit
擄C / W
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
= 90 V, T
ch
= 25擄C (initial), L = 8.2 mH, R
G
= 25
惟,
I
AR
= 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2006-11-08
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