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2SK4002

TOSHIBA Field Effect Transistor

2SK4002

Silicon N-Channel MOS Type (蟺鈭扢OS V)

Chopper Regulator, DC/DC Converter and Motor Drive

Applications

錛栵紟錛暵憋紣錛庯紥

Unit: mm

錛戯紟錛暵憋紣錛庯紥

Low drain鈭抯ource ON-resistance

High forward transfer admittance

Low leakage current

Enhancement mode

: R

DS (ON)

= 4.2

惟

(typ.)

: |Y

fs

| = 1.7 S (typ.)

錛曪紟錛捖憋紣錛庯紥

錛愶紟錛?MAX錛?/div>

: V

th

= 2.0~4.0 V (V

DS

= 10 V, I

D

= 1 mA)

錛戯紟錛?/div>

: I

DSS

= 100

渭A

(max) (V

DS

= 600 V)

錛愶紟錛?/div>

錛曪紟錛暵憋紣錛庯紥

錛戯紟錛懧憋紣錛庯紥

錛旓紟錛懧憋紣錛庯紥

錛曪紟錛?/div>

錛愶紟錛?MAX

Absolute Maximum Ratings

(Ta = 25擄C)

Characteristic

Drain鈭抯ource voltage

Drain鈭抔ate voltage (R

GS

= 20 k鈩?

Gate鈭抯ource voltage

DC

(Note 1)

Symbol

V

DSS

V

DGR

V

GSS

I

D

I

DP

I

DP

P

D

E

AS

I

AR

E

AR

T

ch

T

stg

Rating

600

鹵30

2

5

Unit

V

錛愶紟錛?MAX錛?/div>

錛戯紟1 MAX錛?/div>

錛?/div>

錛掞紟錛?/div>

錛掞紟錛撀憋紣錛庯紥

錛愶紟錛柭憋紣錛庯紤錛?/div>

錛?/div>

A

W

mJ

A

mJ

擄C

Drain current

Pulse (t = 1 ms)

(Note 1)

Pulse (t = 100

渭s)

(Note 1)

JEDEC

JEITA

鈥?/div>

2-7J2B

8

20

93

2

150

鈭?5~150

TOSHIBA

Drain power dissipation (Tc = 25擄C)

Single-pulse avalanche energy

(Note 2)

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Weight: 0.36 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristic

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Symbol

R

th (ch鈭抍)

R

th (ch鈭抋)

Max

6.25

125

Unit

擄C / W

Note 1: Ensure that the channel temperature does not exceed 150擄C.

Note 2: V

DD

= 90 V, T

ch

= 25擄C (initial), L = 41 mH, R

G

= 25

惟,

I

AR

= 2 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

1

2006-11-08

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