2SK3926-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
TO-220F
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
-di/dt
P
D
T
ch
T
stg
V
ISO
Ratings
250
220
34
鹵136
鹵30
34
665.7
9.5
20
5
100
95
2.16
+150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Note *1
Note *2
Note *3
Gate(G)
Source(S)
Note *1:Tch < 150擄C,Repetitive and Non-repetitive
=
Note *2:StartingTch=25擄C,I
AS
=14A,L=5.71mH,
V
CC
=48V,R
G
=50鈩?/div>
EAS limited by maximum channel temperature
and avalanch current.
See to the 鈥楢valanche Energy鈥?graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the 鈥楾ransient Theemal impedance鈥?/div>
graph
kV/碌s V
DS
< 250V
=
kV/碌s Note *4
A/碌s Note *5
Tc=25擄C
W
Ta=25擄C
擄C
擄C
kVrms t=60sec, f=60Hz
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
Note *4:I
F
< -I
D
, -di/dt=100A/
碌
s,V
CC
< BV
DSS
,Tch< 150擄C
=
=
=
<
Note *5:I
F
< -I
D
, dv/dt=5kV/
碌
s,V
CC
BV
DSS
,Tch< 150擄C
=
=
=
Test Conditions
I
D
= 250碌A(chǔ)
V
GS
=0V
碌A(chǔ)
I
D
= 250
V
DS
=V
GS
T
ch
=25擄C
V
DS
=250V V
GS
=0V
T
ch
=125擄C
V
DS
=200V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=17A V
GS
=10V
I
D
=17A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MH
V
CC
=48V I
D
=17A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=125V
I
D
=34A
V
GS
=10V
I
F
=34A V
GS
=0V T
ch
=25擄C
I
F
=34A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
Test Conditions
channel to case
channel to ambient
Min.
250
3.0
Typ.
Max.
5.0
25
2.0
100
110
Units
V
V
碌A(chǔ)
mA
nA
m鈩?/div>
S
pF
13
85
26
1850
2800
220
330
21
32
20
30
19
29
56
85
19
29
56
85
20
30
19
29
1.00
1.50
140
250
0.5
1.25
ns
nC
V
ns
碌C
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
1.316
58
Units
擄C/W
擄C/W
1
1
2
3
4
