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2SK3812-ZP Datasheet

  • 2SK3812-ZP

  • SWITCHING N-CHANNEL POWER MOSFET

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3812
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3812 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3812-ZP
PACKAGE
TO-263 (MP-25ZP)
FEATURES
鈥?/div>
Super low on-state resistance
R
DS(on)1
= 2.8 m鈩?MAX. (V
GS
= 10 V, I
D
= 55 A)
R
DS(on)2
= 3.7 m鈩?MAX. (V
GS
= 4.5 V, I
D
= 55 A)
鈥?/div>
High current rating: I
D(DC)
= 鹵110 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25擄C)
Drain Current (pulse)
Note1
(TO-263)
60
鹵20
鹵110
鹵440
213
1.5
150
鈭?5
to +150
397
63
397
V
V
A
A
W
W
擄C
擄C
mJ
A
mJ
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Total Power Dissipation (T
C
= 25擄C)
Total Power Dissipation (T
A
= 25擄C)
Channel Temperature
Storage Temperature
Single Avalanche Energy
Note2
Note3
Note3
E
AS
I
AR
E
AR
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
= 30 V, R
G
= 25
鈩?
V
GS
= 20
鈫?/div>
0 V, L = 100
碌
H
3.
T
ch(peak)
鈮?/div>
150擄C, R
G
= 25
鈩?/div>
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16738EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004

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