鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 0.32惟 (typ.)
High forward transfer admittance: |Y
fs
| = 7.5 S (typ.)
Low leakage current: I
DSS
= 100
渭A
(V
DS
= 600 V)
Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
鹵30
13
52
50
1033
13
5.0
150
-55~150
A
W
mJ
A
mJ
擄C
擄C
1: Gate
2: Drain
3: Source
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10U1B
Weight: 1.7 g (typ.)
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.5
62.5
Unit
2
擄C/W
擄C/W
Note 1: Ensure that the channel temperature does not exceed 150擄C during use of the device.
Note 2: V
DD
=
90 V, T
ch
=
25擄C (initial), L
=
10.7 mH, I
AR
=
13 A, R
G
=
25
鈩?/div>
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2005-01-24
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