2SK3779-01R
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
250
250
59
鹵236
鹵30
59
1115.2
41
20
5
210
3.13
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1
Note *2
Note *3
Source(S)
Note *1:Tch
<
150擄C,Repetitive and Non-repetitive
=
Note *2:StartingTch=25擄C,I
AS
=24A,L=3.25mH,
V
CC
=48V,R
G
=50鈩?/div>
EAS limited by maximum channel temperature
and avalanch current.
See to the 鈥楢valanche Energy鈥?graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the 鈥楾ransient Theemal impedance鈥?/div>
graph
Note *4:I
F
< -I
D
, -di/dt=50A/碌s,V
CC
< BV
DSS
, Tch< 150擄C
=
=
=
kV/碌s V
DS
< 250V
=
kV/碌s Note *4
Tc=25擄C
W
Ta=25擄C
擄C
擄C
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
I
D
= 250碌A(chǔ)
V
GS
=0V
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=250V
V
DS
=200V
V
GS
=鹵30V
I
D
=29.5A
V
GS
=0V
V
GS
=0V
V
DS
=0V
V
GS
=10V
Min.
250
3.0
T
ch
=25擄C
T
ch
=125擄C
Typ.
Max.
5.0
25
250
100
53
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
I
D
=29.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V I
D
=29.5A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=150V
I
D
=32A
V
GS
=10V
I
F
=59A V
GS
=0V T
ch
=25擄C
I
F
=59A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
Test Conditions
channel to case
channel to ambient
12
43
24
3800
5400
530
795
35
52.5
40
60
62
93
70
105
20
30
80
120
30
45
25
38
1.20
1.50
370
4.5
ns
nC
V
ns
碌C
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.595
40.0
Units
擄C/W
擄C/W
1
1
2
3
4
