2SK3775-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
200406
Super FAP-G Series
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breadown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Foot
Print
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
300
300
鹵32
鹵2.4
鹵128
鹵30
32
597.4
27
20
5
270
2.40
+150
-55 to +150
Unit
V
V
A
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
S1 : Source
G : Gate
D : Drain
Ta=25擄C
S2 : Source
Note *1:Surface mounted on 1000mm
2
,t=1.6mm
Note *2
Note *3
Note *4
FR-4 PCB(Drain pad area:500mm
2)
Note *2:Tch
<
150擄C,Repetitive and Non-repetitive
=
Note *3:StartingTch=25擄C,I
AS
=13A,L=6.13mH,
V
CC
=48V,R
G
=50鈩?/div>
EAS limited by maximum channel temperature
and avalanch current.
kV/碌s V
DS
< 300V
=
See to the 鈥楢valanche Energy鈥?graph
kV/碌s Note *5
Note *4:Repetitive rating:Pulse width limited by
Tc=25擄C
W
maximum channel temperature.
Ta=25擄C Note*1
See to the 鈥楾ransient Theemal impedance鈥?/div>
擄C
擄C
graph
<
Note *5:I
F
<
-I
D
, -di/dt=50A/
碌
s,V
CC
BV
DSS
,Tch
<
150擄C
=
=
=
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A
V
GS
=0V
I
D
= 250碌A
V
DS
=V
GS
V
DS
=300V V
GS
=0V
V
DS
=240V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=16A V
GS
=10V
I
D
=16A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=180V I
D
=16A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=150V
I
D
=32A
V
GS
=10V
I
F
=32A V
GS
=0V T
ch
=25擄C
I
F
=32A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
T
ch
=25擄C
T
ch
=125擄C
Min.
300
3.0
Typ.
Max.
5.0
25
250
100
0.13
Units
V
V
碌A
nA
鈩?/div>
S
pF
12
0.10
24
1970
2955
335
502
20
30
29
44
7.5
11
57
86
7
10.5
44.5
67.0
18.0
27.0
13.5
20.5
0.90
1.50
270
3.0
ns
nC
V
ns
碌C
Thermalcharacteristics
Symbol
Test Conditions
R
th(ch-c)
channel to case
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-a) *1
channel to ambient
2
*1 Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
www.fujielectric.co.jp/fdt/scd
Item
Min.
Typ.
Max.
0.463
87.0
52.0
Units
擄C/W
擄C/W
擄C/W
1
1
2
3
4
