鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 3.3惟 (typ.)
High forward transfer admittance: |Y
fs
| = 1.6S (typ.)
Low leakage current: I
DSS
= 100渭A (V
DS
= 600 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
鹵30
2
5
25
93
2
4
150
-55~150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
1: Gate
2: Drain
3: Source
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
5.0
62.5
Unit
擄C/W
擄C/W
2
Note 1:
Ensure that the channel temperature does not exceed 150鈩?
1
Note 2: V
DD
=
90 V, T
ch
=
25擄C錛坕nitial錛夛級, L
=
41mH, R
G
=
25
鈩?/div>
, I
AR
=
2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2004-12-10
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