Fuji Power MOSFET SuperFAP-G series Target Specification
PRELIMINARY
2SK3680-01 (500V/0.11鈩?52A)
1) Package
Items
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Non-Repetitive
Maximum Avalanche Curent
Repetitive
Maximum Avalanche Curent
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
TO-247
2) Absolute Maximum Ratings (Tc=25鈩冣€僽nless otherwise specified)
Symbols
V
DS
I
D
I
D(pulse)
V
GS
I
AS
I
AR
E
AS
dV
DS
/dt
dV/dt
P
D鈥冿紶錛碿=25鈩?/div>
P
D @Ta=25鈩?/div>
T
ch
T
stg
Ratings
500
鹵52
鹵208
鹵30
52
26
802.7
20
5
600
2.50
150
-55
鈭?/div>
+150
Units
V
A
A
V
A
A
mJ
*1
Maximum Power Dissipation
Operating and Storage
Temperature range
kV/us
kV/us *2
W
W
鈩?/div>
鈩?/div>
3)Electrical Characteristics (Tch=25鈩?unless otherwise specified)
Items
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Symbols
Test Conditions
V
GS
=0V
BV
DSS
I
D
=250碌A(chǔ)
V
GS
(th)
V
DS
=V
GS
I
D
=250碌A(chǔ)
T
ch
=25鈩?/div>
V
DS
=500V
I
DSS
T
ch
=125鈩?/div>
V
GS
=0V
I
GSS
V
GS
=鹵30V
V
DS
=0V
I
D
=26A
V
DS
=25V
V
GS
=0V
f=1MHz
Vcc=250V
I
D
=52A
V
GS
=10V
Tch=25鈩?/div>
L=544
碌
H
I
F
=52A,VGS=0V,Tch=25鈩?/div>
VGS=10V
min.
500
3.0
---
---
---
---
---
---
---
---
---
---
52
---
typ.
---
---
---
---
---
---
5060
770
50
118
40
44
---
1.00
max.
---
5.0
25
250
100
0.11
7590
1155
75
177
60
66
---
1.50
Units
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
鈩?/div>
pF
Drain-Source On-State Resistance R
DS
(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
C
iss
C
oss
C
rss
Qg
Qgs
Qgd
I
AV
V
SD
nC
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min.
typ.
max. Units
0.2083 擄C/W
擄C/W
50.0
*1 L=544碌H,Vcc=50V
*2 I
F
鈮?/div>
-I
D
,-di/dt=50A/
碌
s,Vcc
鈮?/div>
BV
DSS
,Tch
鈮?/div>
150
擄
C
DATE
DRAWN
Sep.-03-'02
CHECKED
Sep.-03-'02
REVISIONS
MA4LE
NAME
APPROVED
DWG.NO.
Fuji Electric Co.,Ltd.
MT5F12591
1/1
2SK3680-01 產(chǎn)品屬性
?頻道
52A
500V
110mohm
10V
5V
600W
TO-247
3
600W
600W
802.7mJ
TO-247
SOT-249
5.45mm
600W
25°C
25°C
52A
10V
500V
30V
208A
150°C
通孔安裝
26A
3V
5V
2SK3680-01相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
-
英文版
Silicon N Channel MOS FET High Speed Power Switching
HITACHI
-
英文版
Low-Frequency Amp Applications
SANYO
-
英文版
Small switching (30V, 0.1A)
ROHM
-
英文版
Silicon N-Channel Power F-MOS FET
PANASONIC
-
英文版
N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
TOSHIBA
-
英文版
N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
TOSHIBA [Toshib...
-
英文版
ETC [2SK33]
ETC
-
英文版
2SK34
ETC
-
英文版
2SK34
ETC [ETC]
-
英文版
Sony Corporation [2SK300]
-
英文版
SI N CHANNEL JUCTION
PANASONIC
-
英文版
SI N CHANNEL JUCTION
PANASONIC [Pana...
-
英文版
N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)
TOSHIBA [ Tosh...
-
英文版
FM TUNER, VHF RF AMPLIFIER APPLICATIONS
Toshiba
-
英文版
N-Channel Junction Silicon FET
KEXIN [Gua...
-
英文版
N-Channel Junction Silicon FET
Sanyo
-
英文版
Low-Frequency General-Purpose Amp Applications
-
英文版
N-Channel Junction Silicon FET
Sanyo
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 10A I(D) |...
ETC
1
