2SK3662
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (蟺-MOSII)
2SK3662
Switching Regulator, DC鈭扗C Converter, Motor Drive
Applications
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 9.4 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 55 S (typ.)
Low leakage current: I
DSS
=
100
碌A(chǔ) (max) (V
DS
= 60 V)
Enhancement-mode : V
th
=
1.3
to 2.5 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
(Note 3)
Channel temperature
Storage temperature range
E
AR
T
ch
T
stg
Rating
60
60
鹵20
35
105
35
204
35
3.5
150
-55
to 150
Unit
V
V
V
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
Drain power dissipation (Tc
=
25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
JEDEC
JEITA
TOSHIBA
鈥?/div>
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抍)
R
th (ch鈭抋)
Max
3.57
62.5
Unit
擄C/ W
擄C/ W
Note 1: Please use devices on condition that the channel temperature is
below 150擄C.
Note 2: V
DD
=
25 V, T
ch
=
25擄C (initial), L
=
227
mH,
I
AR
=
35 A, R
G
=
25
W
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-01-16
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