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2SK3659 Datasheet

  • 2SK3659

  • SWITCHING N-CHANNEL POWER MOSFET

  • 8頁

  • NEC   NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3659
PACKAGE
Isolated TO-220
FEATURES
鈥?.5V
drive available.
鈥ow
on-state resistance,
R
DS(on)1
= 5.7 m鈩?MAX. (V
GS
= 10 V, I
D
= 40 A)
鈥ow
gate charge,
Q
G
= 32 nC TYP. (V
DD
= 16 V, V
GS
= 10 V, I
D
= 65 A)
鈥uilt-in
gate protection diode.
鈥valanche
capability ratings.
鈥solated
TO-220 package.
ABSOLUTE MAXIMUM RATING (T
A
= 25
擄C
)
Drain to source voltage (V
GS
= 0 V)
Gate to source voltage (V
DS
= 0 V)
Drain current (DC) (T
C
= 25擄C)
Drain current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
鹵20
鹵65
鹵260
2.0
25
150
鈭?5
to +150
35
122
V
V
A
A
W
W
擄C
擄C
A
mJ
Total power dissipation (T
A
= 25擄C)
Total power dissipation (T
C
= 25擄C)
Channel temperature
Storage temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Note 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25擄C, V
DD
= 10 V, R
G
= 25
鈩?
V
GS
= 20
鈫?/div>
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16251EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP (K)
Printed in Japan
漏
2002

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