2SK3651-01R
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
200
V
V
DSX *5
220
A
Continuous drain current
I
D
鹵25
A
Pulsed drain current
I
D(puls]
鹵100
V
Gate-source voltage
V
GS
鹵30
A
Non-repetitive Avalanche current I
AS *2
25
mJ
Maximum Avalanche Energy
E
AS *1
372
kV/碌s
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
kV/碌s
Peak Diode Recovery dV/dt
dV/dt
*3
5
擄C
Max. power dissipation
P
D
Ta=25
3.10
W
擄C
Tc=25
85
Operating and storage
T
ch
+150
擄C
-55 to +150
temperature range
T
stg
擄C
Isolation voltage
V
ISO *6
2
kVrms
<150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C
*1 L=1mH, Vcc=48V
*2 Tch =
=
=
=
*4 V
DS
< 250V
*5 V
GS
=-30V *6 t=60sec f=60Hz
=
Item
Drain-source voltage
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A(chǔ)
V
GS
=0V
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=250V
V
DS
=200V
V
GS
=鹵30V
I
D
=12.5A
V
GS
=0V
V
GS
=0V
V
DS
=0V
V
GS
=10V
T
ch
=25擄C
T
ch
=125擄C
10
75
16
2000
400
25
20
30
60
20
44
14
16
1.10
0.45
1.5
Min.
250
3.0
Typ.
Max.
5.0
25
250
100
100
3000
600
38
30
45
90
30
66
21
24
1.65
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
I
D
=12.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=72V I
D
=12.5A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=72V
I
D
=12A
V
GS
=10V
L=100碌H T
ch
=25擄C
I
F
=25A V
GS
=0V T
ch
=25擄C
I
F
=25A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
8
ns
nC
25
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
1.471
40.0
Units
擄C/W
擄C/W
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