2SK3608-01L,S,SJ
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
P4
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25擄C unless otherwise specified)
Symbol
Ratings
Unit
V
V
DS
200
V
V
DSX *5
170
A
Continuous drain current
I
D
鹵13
A
Pulsed drain current
I
D(puls]
鹵52
V
Gate-source voltage
V
GS
鹵30
A
Non-repetitive Avalanche current I
AS *2
13
mJ
Maximum Avalanche Energy
E
AS *1
175
kV/碌s
Maximum Drain-Source dV/dt
dV
DS
/dt
*4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
kV/碌s
擄C
Max. power dissipation
P
D
Ta=25
1.67
W
擄C
Tc=25
50
Operating and storage
T
ch
+150
擄C
-55 to +150
temperature range
T
stg
擄C
<150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C
*1 L=1.65mH, Vcc=48V *2 Tch =
=
=
=
*4 V
DS
< 200V
*5 V
GS
=-30V
=
Item
Drain-source voltage
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A(chǔ)
V
GS
=0V
I
D
= 250碌A(chǔ)
V
DS
=V
GS
V
DS
=200V V
GS
=0V
V
DS
=160V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=6.5A V
GS
=10V
I
D
=6.5A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=6.5A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=100V
I
D
=13A
V
GS
=10V
L=100碌H T
ch
=25擄C
I
F
=13A V
GS
=0V T
ch
=25擄C
I
F
=13A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
T
ch
=25擄C
T
ch
=125擄C
10
131
11
770
110
5
12
2.6
22
6.1
21
8
5
1.10
0.15
0.88
Min.
200
3.0
Typ.
Max.
5.0
25
250
100
170
1155
165
7.5
18
3.9
33
9.2
31.5
12
7.5
1.65
Units
V
V
碌A(chǔ)
nA
m鈩?/div>
S
pF
5.5
ns
nC
13
A
V
碌s
碌C
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
2.5
75.0
Units
擄C/W
擄C/W
www.fujielectric.co.jp/denshi/scd
1
1
2
3
4
