鐗規(guī)畩鍝佽鍙?/div>
Lot No.
銉儍銉圢o.
Type name
錕?frac12;錕藉悕
Equivalent circuit schematic
D : Drain
G : Gate
S1 : Source
S2 : Source
** Surface mounted on 1000mm
2
, t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
*1 L=689碌H, Vcc=48V
*2 Tch< 150擄C *3 I
F
< -I
D
, -di/dt=50A/碌s, Vcc < BV
DSS
, Tch < 150擄C
=
=
=
=
*4 V
DS
< 200V *5 V
GS
=-30V
=
Electrical characteristics (T
c
=25擄C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250碌A
V
GS
=0V
碌A
I
D
= 250
V
DS
=V
GS
V
DS
=200V V
GS
=0V
V
DS
=160V V
GS
=0V
V
GS
=鹵30V V
DS
=0V
I
D
=15A V
GS
=10V
I
D
=15A V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=15A
V
GS
=10V
R
GS
=10
鈩?/div>
V
CC
=100V
I
D
=30A
V
GS
=10V
L=100碌H T
ch
=25擄C
I
F
=30A V
GS
=0V T
ch
=25擄C
I
F
=30A V
GS
=0V
-di/dt=100A/碌s T
ch
=25擄C
T
ch
=25擄C
T
ch
=125擄C
Min.
200
3.0
Typ.
Max.
5.0
25
250
100
66
Units
V
V
碌A
nA
m鈩?/div>
S
pF
10
50
12.5
25
1960
2940
260
390
18
27
20
30
17
26
53
80
19
29
51
76.5
15
22.5
16
24
30
1.10
1.65
0.19
1.4
ns
nC
A
V
碌s
碌C
Thermalcharacteristics
Symbol
Test Conditions
R
th(ch-c)
channel to case
Thermal resistance
R
th(ch-a)
channel to ambient
R
th(ch-a) **
channel to ambient
2
** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm
2
)
Item
Min.
Typ.
Max.
0.926
87.0
52.0
Units
擄C/W
擄C/W
www.fujielectric.co.jp/denshi/scd
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